61213 tkim tc-00002929/10913 tkim no. a2166-1/8 http://onsemi.com semiconductor components industries, llc, 2013 june, 2013 CPH6635 power mosfet 3 0v, 0.4a, 3.7 , ? 20v, ? 1.5a, 280m , complementary dual cph6 features ? excellent on-resistance characteristic (p-channel : r ds (on)1=215m (typ.)) ? optimal for load switch use (n-channel for drive is embedded) ? n-channel : 1.5v drive, p-channel : 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain to source voltage v dss 30 --20 v gate to source voltage v gss 10 10 v drain current (dc) i d 0.4 --1.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.6 --6.0 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7018a-007 ordering number : ena2166 ordering & package information device package shipping memo CPH6635-tl-h cph6 sc-74, sot-26, sot-45 3,000 pcs./reel pb free and halogen free packing type: tl marking electrical connection tl 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 cph6 3 2 1 64 5 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 CPH6635-tl-h ww lot no. 65 4 13 2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
CPH6635 no.8987-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =80ma 0.22 s static drain to source on-state resistance r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 input capacitance ciss v ds =10v, f=1mhz 7pf output capacitance coss 5.9 pf reverse transfer capacitance crss 2.3 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 65 ns turn-off delay time t d (off) 155 ns fall time t f 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate to source charge qgs 0.26 nc gate to drain ?miller? charge qgd 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v [p-channel] drain to source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.4 v forward transfer admittance | yfs | v ds =--10v, i d =--800ma 1.9 s static drain to source on-state resistance r ds (on)1 i d =--800ma, v gs =--4.5v 215 280 m r ds (on)2 i d =--400ma, v gs =--2.5v 310 434 m r ds (on)3 i d =--200ma, v gs =--1.8v 450 675 m input capacitance ciss v ds =--10v, f=1mhz 120 pf output capacitance coss 26 pf reverse transfer capacitance crss 20 pf turn-on delay time t d (on) see speci ed test circuit. 5.3 ns rise time t r 9.7 ns turn-off delay time t d (off) 16 ns fall time t f 14 ns total gate charge qg v ds =--10v, v gs =--4v, i d =--1.5a 1.7 nc gate to source charge qgs 0.28 nc gate to drain ?miller? charge qgd 0.47 nc diode forward voltage v sd i s =--1.5a, v gs =0v --0.9 --1.5 v
CPH6635 no. a2166-3/8 switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% p. g 50 g s d i d =150ma r l =100 v dd =15v v out v in 4v 0v v in CPH6635 pw=10 s d.c. 1% p. g 50 g s d i d = --800ma r l =12.5 v dd = --10v v out v in 0v --4.5v v in CPH6635 gate to source voltage, v gs -- v i d -- v gs drain current, i d -- a drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta= --25 c 25 c 75 c it00029 it00030 drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c 0.01 0.1 2 3 57 2 3 57 10 7 5 3 2 1.0 1.0 25 c --25 c ta=75 c it00031 it00032 v gs =4v 40ma i d =80ma [nch] [nch] [nch] [nch]
CPH6635 no.8987-4/8 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a sw time -- i d switching time, sw time -- ns drain current, i d -- a forward transfer admittance, | y fs | -- s | y fs | -- i d ambient temperature, ta -- c r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v --25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038 --60 0 --40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 57 0.1 7 5 3 2 7 5 3 2 1.0 1.0 v ds =10v 75 c 25 c ta= --25 c it00035 it00036 0.01 0.1 23 57 23 57 10 1.0 7 5 3 2 1.0 v gs =2.5v 0.001 1.0 0.01 23 57 23 57 100 10 7 5 3 2 7 5 3 2 0.1 v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034 v gs -- qg gate to source voltage, v gs -- v drain to source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf total gate charge, qg -- nc 0 2 4 6 8 101214161820 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00039 it00040 [nch] [nch] [nch] [nch] [nch] [nch] [nch] [nch]
CPH6635 no. a2166-5/8 [nch] a s o drain to source voltage, v ds -- v drain current, i d -- a 1.0 23 5 10 23 5 7 2 3 5 7 2 3 2 3 5 7 1.0 0.1 0.01 it11328 i dp =1.6a (pw 10 s) i d =0.4a operation in this area is limited by r ds (on). 100ms dc operation 1ms 10ms ta=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm)1unit [pch] [pch] i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v i d -- v ds drain current, i d -- a it14614 --25 c ta=75 c --0.1 --0.2 --0.6 --0.4 --0.3 --0.7 --0.8 --1.0 --0.9 --0.5 0 0 --0.2 --2.0 --1.4 --1.8 --1.6 --1.2 --1.0 --0.8 --0.6 --0.4 0 --0.2 --2.0 --1.4 --1.8 --1.6 --1.2 --1.0 --0.8 --0.6 --0.4 it14615 --1.0 --0.5 --2.0 --1.5 --3.0 --2.5 0 v gs = --1.0v v ds = --10v 25 c --8.0v --1.5v --2.5v --3.5v --4.5v --1.8v [pch] [pch] i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s it14619 --1.2 --1.0 --0.6 --0.4 --0.8 --0.2 0 --0.01 5 7 3 2 5 7 3 2 5 3 2 --0.1 --1.0 ta=75 c 25 c - -25 c v gs =0v it14618 --0.01 --0.1 --1.0 3 5 7 2 3 1.0 0.1 7 5 2 23 5 23 7 23 57 ta= --25 c 25 c 75 c v ds = --10v gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- m static drain to source on-state resistance, r ds (on) -- m case temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs [pch] [pch] it17000 --60 --40 --20 160 0 20 40 60 80 100 120 140 it16999 0 --1 --3 --5 --8 --10 -- 2 -- 4 -- 7 -- 6 -- 9 100 0 200 700 400 300 500 600 100 0 200 700 400 300 500 600 v gs = --4.5v, i d = --0.8a v gs = --2.5v, i d = --0.4a v gs = --1.8v, i d = --0.2a ta=25 c i d = --0.2a --0.4a --0.8a
CPH6635 no.8987-6/8 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 1.0 0.6 0.8 60 80 100 120 140 160 it16651 [nch/pch] when mounted on ceramic substrate (900mm 2 0.8mm) 1unit [pch] total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v it14622 0 0.2 0.4 1.0 0.8 1.8 1.4 1.6 1.2 0.6 2.0 0 --1.0 --2.0 --3.0 --0.5 --1.5 --2.5 --4.0 --3.5 --4.5 v ds = --10v i d = --1.5a [pch] [pch] ciss, coss, crss -- v ds ciss, coss, crss -- pf drain to source voltage, v ds -- v sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 --20 --4 --10 -- 8 --6 --14 --18 --12 --16 -- 2 10 2 it14621 --0.1 --1.0 23 57 23 3 3 5 7 100 7 2 ciss crss it14620 10 2 3 5 7 2 3 5 t d (off) v dd = --10v v gs = --4.5v t r t f coss t d (on) f=1mhz a s o drain to source voltage, v ds -- v drain current, i d -- a [pch] it17001 --0.01 --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 7 --10 --0.1 --1.0 i dp = --6a (pw 10 s) i d = --1.5a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --10 23 57 23 5 23 5 7 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
CPH6635 no. a2166-7/8 outline drawing land pattern example CPH6635-tl-h mass (g) unit 0.015 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
CPH6635 ps no. a2166-8/8 note on usage : since the CPH6635 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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